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Optical Monitoring Photodiode Chip
KIP-M25-1
Description KIP-M25-1 is InGaAs PIN Photodiode chip with 250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current High reliability and environmental endurance Wide operating wavelength range from 1.1mm to 1.6mm Applications Optical Data Communications Optical power monitoring Absolute Maximum Ratings Symbol Parameter VR Reverse Voltage Pmax Maximun Optical Power Input IF Forward Current Topr Operating Temperature Tstg. Storage Temperature Die- Attach Temperature *1 *1 : Attach Temperature Time 60 seconds max
Ratings 20 30 10 -40 ~ +85 -40 ~ +100 300
Unit V mW mA
Electro-Optical Characteristics Symbol Min. Typ. Max. Parameter Active area D 250 ID 0.1 1.0 Dark Current 0.85 0.90 1.31um Responsivity S 0.90 0.95 1.55um f h,-3dB 0.1 3dB Cut off frequency 0.5 Capacitance Cp 5 7 * These specifications are subject to change without notice. Physical Dimension Properties Parameter Active area Chip Size bonding Pad Size (O) Chip Thickness Ordering information KIP KODENSHI InGaAs PIN Photodiode Chip
Unit nA mA/mW GHz pF
Condition @ V R=5V, 25 @ V R=5V, 25 @VR=5, RL=50 @ V R=5V, f=1MHz
Symbol D t
Typ. 250 420 x 420 100 120
Unit 2
Data Rate M: Monitoring 1: 1.5 Gbps 2: 2.5 Gbps
Carrier type Active area 05: O50 1: chips in gel pack 07: O75 25: 250 sq 2: chips on submounter 3: chips on blue tape
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For more information on other parts available, please visit our website: www.kodenshi.co.kr Rev.002 KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea

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